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| BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 q q q 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B BDV64C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 0.1 ms, duty cycle 10% 2. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 -0.5 125 3.5 -65 to +150 -65 to +150 260 V A A A W W C C C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDV64 V (BR)CEO IC = -30 mA IB = 0 (see Note 4) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current V CB = -40 V V CB = -50 V V CB = -60 V VCB = -60 V V CB = -80 V V CB = -100 V ICBO Collector cut-off current V CB = -120 V V CB = -30 V V CB = -40 V V CB = -50 V V CB = -60 V IEBO hFE VCE(sat) VBE VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = -5 V -4 V -20 mA -4 V -10 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -5 A IC = -5 A IC = -5 A IB = 0 (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) 1000 -2 -2.5 -3.5 V V V TC = 150C TC = 150C TC = 150C TC = 150C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C MIN -60 -80 -100 -120 -2 -2 -2 -2 -0.4 -0.4 -0.4 -0.4 -2 -2 -2 -2 -5 mA mA mA V TYP MAX UNIT NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1 35.7 UNIT C/W C/W PRODUCT INFORMATION 2 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCS145AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 -1*5 TCS145AE hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 1000 -1*0 -0*5 TC = -40C TC = 25C TC = 100C 0 -0*5 -1*0 IC - Collector Current - A -10 -20 VCE = -4 V t p = 300 s, duty cycle < 2% 100 -0*5 -1*0 IC - Collector Current - A -10 -20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C -2*5 TC = 100C TCS145AF -2*0 -1*0 -1*5 -0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 0 -0*5 -1*0 IC - Collector Current - A -10 -20 Figure 3. PRODUCT INFORMATION 3 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS140AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 4. PRODUCT INFORMATION 4 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 5 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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